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| (R) 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is inteded for use in low and medium frequency power applications. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R2 Typ. = 160 ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CER V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I B = 0) Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (R BE 100) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 80 80 80 5 10 15 0.25 65 -65 to 150 150 Unit V V V V V A A A W o o C C April 1999 1/4 2N6388 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.92 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CEO V CE = rated V CEO V CE = 80 V V EB = 5 V I C = 200 mA I C = 200 mA I C = 200 mA IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 1 A IC = 1 A I F = 10 A IE = 0 V CB = 10 V f = 1MHz 2.6 R BE = 100 IC = 4.5 A 120 R BE = 100 V BE = -1.5V I B = 10 mA I B = 100 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V V CE = 10 V V CE = 10 V f = 1MHz f = 1KHz 1000 100 20 1000 4 200 V pF A mJ 80 80 80 2 3 2.8 4.5 20000 T c = 125 o C Min. Typ. Max. 0.3 3 1 5 Unit mA mA mA mA V V V V V V V V CEO(sus) Collector-Emitter Sustaining Voltage V CER(sus) Collector-Emitter Sustaining Voltage V CEV(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE h FE h fe VF C CBO I s/b E s/b Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain Parallel-diode Forward Voltage Collector Base Capacitance Second Breakdown Collector Current Second Breakdown Energy V CE = 25 V L = 12 mH V BE = -1.5 V Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Pulsed: Pulse duration = 100ms non repetitive pulse. 2/4 2N6388 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 3/4 2N6388 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 4/4 |
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